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 DATA SHEET
N-CHANNEL GaAs MESFET
NEZ1011-3E, NEZ1414-3E
3W X, Ku-BAND POWER GaAs MESFET
DESCRIPTION
The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
* High Output Power : Po (1 dB) = +34.0 dBm typ. * High Linear Gain * High Efficiency : 8.5 dB typ. (NEZ1011-3E), 7.5 dB typ. (NEZ1414-3E) : 30 % typ.
* Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number NEZ1011-3E NEZ1414-3E T-78 Package
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NEZ1011-3E, NEZ1414-3E)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Symbol VDS VGS IDS Ratings 15 -7 3.0 (NEZ1011-3E) 2.5 (NEZ1414-3E) +20 -20 15 175 -65 to +175 Unit V V A
Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature
IGF IGR PT Tch Tstg
mA mA W C C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No. P13726EJ1V0DS00 (1st edition) Date Published September 1998 N CP(K) Printed in Japan
(c)
1998
NEZ1011-3E, NEZ1414-3E
RECOMMENDED OPERATING LIMITS
Characteristics Drain to Source Voltage Gain Compression Channel Temperature Gate Resistance
Note
Symbol VDS Gcomp Tch Rg
Test Condition
MIN. 10
TYP. 10
MAX. 10 3 +130
Unit V dB C
100
200
200
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-3E] ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 10 mA IGD = 10 mA Channel to Case f = 10.7, 11.2, 11.7 GHz VDS = 10 V IDS = 0.7 A (RF OFF) Rg = 200 8.0 33.5 MIN. 0.7 -2.5 TYP. 1.6 -1.3 15 5.5 8.5 34.0 0.9 30 1.1 7.0 MAX. 2.5 -0.5 Unit A V V C/W dB dBm A %
add (1 dB)
[NEZ1414-3E] ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 10 mA IGD = 10 mA Channel to Case f = 14.0 to 14.5 GHz VDS = 10 V IDS = 0.7 A (RF OFF) Rg = 200 7.0 33.5 MIN. 0.7 -3.0 15 TYP. 1.5 -1.3 18 5.5 7.5 34.0 0.9 30 1.1 7.0 MAX. 2.5 -0.5 Unit A V V C/W dB dBm A %
add (1 dB)
2
NEZ1011-3E, NEZ1414-3E
[NEZ1011-3E] TYPICAL CHARACTERISTICS (TA = 25C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER 80
Pout +35
70
Pout - Output Power - dBm
60
50 +30
add
40
30
+25
20
10
0 +20 +25 Pin - Input Power - dBm +30 TEST CONDITIONS Vds : 10 (V) Ids : 0.7 (A)
add - Efficiency - %
3
NEZ1011-3E, NEZ1414-3E
[NEZ1011-3E] TYPICAL S-PARAMETERS
Vds = 10 V, Ids = 0.7 A START 9.5 GHz, STOP 13 GHz, STEP 100 MHz Marker 1: 10.7 GHz 2: 11.7 GHz
S11 1.0 0.5 1 1 0 2 2 180 0 2.0 +135 +45 S12 +90
-0.5 -1.0
-2.0
-135 -90
-45
Rmax = 1
Rmax = 0.25
S21 +90 0.5 +135 1 +45
S22 1.0 2.0
1 180 2 0 0 2
-135 -90
-45 -0.5 -1.0 -2.0
Rmax = 5
Rmax = 1
4
NEZ1011-3E, NEZ1414-3E
[NEZ1011-3E] TYPICAL S-PARAMETERS
MAG. AND ANG. Vds = 10 V, Ids = 0.7 A
FREQUENCY GHz MAG. S11 ANG. (deg.) 9.50 9.60 9.70 9.80 9.90 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 13.0 0.758 0.756 0.753 0.747 0.741 0.729 0.716 0.699 0.681 0.663 0.641 0.622 0.594 0.575 0.552 0.526 0.506 0.477 0.456 0.421 0.394 0.358 0.318 0.279 0.238 0.207 0.196 0.206 0.247 0.303 0.355 0.412 0.463 0.515 0.554 0.592 -167.394 -178.080 171.534 160.110 148.582 136.701 124.861 112.554 100.951 89.422 77.975 67.465 56.596 46.627 36.251 26.669 16.606 6.699 -3.133 -13.553 -23.840 -36.372 -48.904 -64.303 -83.347 -106.265 -137.799 -166.807 167.143 147.107 131.677 118.317 107.592 98.516 89.205 81.593 0.016 0.017 0.017 0.018 0.021 0.023 0.027 0.030 0.034 0.039 0.043 0.048 0.052 0.056 0.061 0.064 0.068 0.072 0.074 0.077 0.082 0.084 0.094 0.094 0.099 0.104 0.096 0.102 0.097 0.095 0.104 0.096 0.101 0.106 0.082 0.088 MAG. S12 ANG. (deg.) -38.869 -61.597 -85.661 -111.750 -134.473 -166.059 172.305 148.721 124.787 108.584 89.470 72.734 55.926 39.231 23.037 7.384 -5.912 -21.590 -34.562 -47.800 -62.818 -76.490 -91.324 -106.787 -122.489 -137.246 -154.077 -169.139 177.258 161.786 145.134 132.629 117.730 100.775 85.179 67.387 2.070 2.270 2.354 2.443 2.673 2.724 2.712 2.838 2.852 2.871 2.903 2.901 2.877 2.883 2.855 2.840 2.859 2.845 2.827 2.874 2.845 2.814 2.828 2.845 2.802 2.794 2.770 2.602 2.579 2.518 2.375 2.236 2.136 2.000 1.833 1.844 MAG. S21 ANG. (deg.) -95.765 -112.000 -124.079 -134.989 -151.686 -167.752 176.255 161.634 145.982 130.974 116.200 101.015 86.322 71.797 56.973 42.964 28.788 14.134 0.090 -14.501 -29.761 -44.123 -57.372 -74.316 -90.229 -105.992 -121.151 -139.284 -153.949 -167.663 174.497 158.167 143.526 129.810 115.840 101.315 0.646 0.622 0.596 0.566 0.531 0.491 0.448 0.407 0.365 0.320 0.283 0.252 0.230 0.220 0.221 0.227 0.236 0.249 0.258 0.266 0.273 0.273 0.270 0.264 0.253 0.238 0.217 0.195 0.170 0.151 0.139 0.143 0.160 0.187 0.223 0.263 MAG. S22 ANG. (deg.) -84.187 -91.487 -98.423 -106.284 -114.977 -124.124 -134.075 -145.607 -158.261 -172.715 170.970 153.109 133.047 112.266 92.840 74.999 58.649 44.182 30.971 19.236 7.519 -3.614 -14.579 -25.846 -37.420 -49.841 -64.490 -80.310 -98.820 -121.496 -147.026 -175.150 159.252 137.814 120.093 104.506
5
NEZ1011-3E, NEZ1414-3E
[NEZ1414-3E] TYPICAL CHARACTERISTICS (TA = 25C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER 80 Pout +35 70
Pout - Output Power - dBm
60
50 +30 40
add
30
+25
20
10
0 +20 +25 Pin - Input Power - dBm +30 TEST CONDITIONS Vds : 10 (V) Ids : 0.7 (A)
6
add - Efficiency - %
NEZ1011-3E, NEZ1414-3E
[NEZ1414-3E] TYPICAL S-PARAMETERS
Vds = 10 V, Ids = 0.7 A START 12.5 GHz, STOP 16 GHz, STEP 100 MHz Marker 1: 14.0 GHz 2: 14.5 GHz
S11 1.0 0.5 2.0 +135 1 2 +45 S12 +90
0
2 1
180
0
-0.5 -1.0
-2.0
-135 -90
-45
Rmax = 1
Rmax = 0.25
S21 +90 0.5 +135 2 1 +45
S22 1.0 2.0
1 180 0 0 2
-135 -90
-45 -0.5 -1.0 -2.0
Rmax = 5
Rmax = 1
7
NEZ1011-3E, NEZ1414-3E
[NEZ1414-3E] TYPICAL S-PARAMETERS
MAG. AND ANG. Vds = 10 V, Ids = 0.7 A
FREQUENCY GHz MAG. S11 ANG. (deg.) 12.5 12.6 12.7 12.8 12.9 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 15.0 15.1 15.2 15.3 15.4 15.5 15.6 15.7 15.8 15.9 16.0 0.719 0.711 0.701 0.692 0.679 0.663 0.644 0.618 0.595 0.563 0.526 0.489 0.456 0.416 0.377 0.343 0.313 0.294 0.279 0.280 0.290 0.311 0.335 0.365 0.399 0.429 0.464 0.494 0.527 0.557 0.585 0.609 0.637 0.662 0.689 0.712 53.886 47.149 40.458 33.576 26.020 18.249 10.160 1.646 -7.111 -16.548 -25.145 -35.526 -46.154 -57.915 -70.286 -85.075 -99.701 -116.892 -134.554 -152.981 -170.788 172.755 157.567 143.616 130.905 119.275 107.553 96.624 85.758 74.761 63.969 53.504 43.075 32.905 23.314 14.183 0.040 0.041 0.045 0.053 0.042 0.049 0.047 0.049 0.064 0.065 0.077 0.075 0.093 0.082 0.103 0.098 0.095 0.100 0.094 0.095 0.097 0.099 0.103 0.107 0.107 0.113 0.103 0.102 0.099 0.092 0.094 0.089 0.090 0.085 0.081 0.077 MAG. S12 ANG. (deg.) -21.073 -31.351 -46.830 -65.105 -73.678 -88.910 -103.967 -120.923 -120.017 -145.066 -142.359 -163.290 176.132 162.566 139.665 125.092 111.685 96.429 86.105 74.312 57.873 47.734 30.419 13.941 2.025 -16.130 -30.134 -44.244 -58.636 -72.875 -85.272 -100.362 -114.497 -128.650 -143.080 -158.527 1.623 1.571 1.757 1.859 1.833 2.026 2.086 2.173 2.187 2.210 2.522 2.662 2.337 2.464 2.434 2.275 2.325 2.433 2.439 2.345 2.353 2.331 2.289 2.271 2.246 2.194 2.143 2.107 2.045 1.981 1.914 1.841 1.754 1.652 1.549 1.464 MAG. S21 ANG. (deg.) -13.398 -28.325 -33.874 -41.761 -59.610 -70.949 -85.573 -106.664 -118.017 -129.939 -147.418 -157.868 -172.992 172.138 159.722 143.024 129.758 114.563 99.326 84.796 71.364 57.886 43.831 29.748 14.939 4.129E-03 -14.722 -29.373 -44.663 -59.754 -74.732 -89.690 -104.952 -119.894 -134.935 -149.340 0.572 0.550 0.527 0.505 0.485 0.461 0.440 0.417 0.395 0.374 0.352 0.330 0.314 0.290 0.269 0.247 0.224 0.203 0.180 0.158 0.137 0.117 0.097 0.079 0.064 0.051 0.047 0.050 0.063 0.083 0.107 0.135 0.170 0.205 0.242 0.285 MAG. S22 ANG. (deg.) 138.754 132.075 125.104 118.247 110.343 101.940 93.894 84.674 75.637 65.729 56.686 45.913 34.867 23.930 12.656 0.903 -9.557 -20.611 -31.631 -42.823 -54.744 -67.351 -81.497 -98.629 -119.130 -146.249 179.696 143.024 112.003 88.873 69.553 53.228 39.561 26.756 15.205 5.958
8
NEZ1011-3E, NEZ1414-3E
PACKAGE DIMENSIONS (UNIT: mm)
8.25 0.15 Gate
Source 9.7 0.13 2.74 0.1 R 0.65
Drain 13 0.1 16.5 0.13
1.8 0.1 9 0.3
3.0 0.2 0.2 MAX.
9
NEZ1011-3E, NEZ1414-3E
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Partial Heating Soldering Conditions Pin temperature: 260C Time: 5 seconds or less (per pin row) Recommended Condition Symbol -
For details of recommended soldering conditions, please contact your local NEC sales office.
10
NEZ1011-3E, NEZ1414-3E
[MEMO]
11
NEZ1011-3E, NEZ1414-3E
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5


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